Mutual Passivation Effects in Si-doped Diluted InyGa1-yAs1-xNx Alloys
نویسندگان
چکیده
J. Wu, K. M. Yu, W. Walukiewicz, G. He, E. E. Haller, D. E. Mars, D. R Chamberlin 1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 2. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 3. Department of Mechanical Engineering, Massachusetts Institute of Technology, Massachusetts 02139 4. Agilent Laboratories, 3500 Deer Creek Road, Palo Alto, California 94304
منابع مشابه
Mutual passivation of electrically active and isovalent impurities.
The alloy GaN(x) As(1-x) (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs). Here we demonstrate the existence of an entirely new effect in the GaN(x) As(1-x) alloy system in which the Si donor in the substitututional Ga site...
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